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 2N6284 2N6287
Complementary power Darlington transistors
Features

Complementary transistors in monolithic Darlington configuration Integrated collector-emitter antiparallel diode
Applications

Audio power amplifier DC-AC converter General purpose switching applications
1 2
TO-3
Description
The 2N6284 is an epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications. The complementary PNP type is 2N6287. Figure 1. Internal schematic diagrams
R1 typ. = 8 k
R2 typ. = 60 k
Table 1.
Device summary
Marking 2N6284 2N6287 Package TO-3 Packaging Bag
Order code 2N6284 2N6287
January 2009
Rev 3
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www.st.com 8
Absolute maximum ratings
2N6284 - 2N6287
1
Absolute maximum ratings
Table 2. Absolute maximum ratings
Value Symbol Parameter NPN PNP VCBO VCEO VEBO IC ICM IB Ptot Tstg TJ Collector-base voltage (IE = 0) 2N6284 2N6287 100 100 5 20 40 0.5 160 -65 to 200 200 V V V A A A W C C Unit
Collector-emitter voltage (IB = 0) Emitter-base voltage Collector current Collector peak current (tP < 5 ms) Base current Total dissipation at TC = 25 C Storage temperature Max. operating junction temperature (IC = 0)
For PNP type voltage and current values are negative
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case____ ____Max Value 1.09 Unit C/W
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2N6284 - 2N6287
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 C; unless otherwise specified) Table 4.
Symbol ICEV ICEO IEBO VCEO(sus)(1) VCE(sat)(1) VBE(sat)(1) VBE(1) hFE(1) hfe
Electrical characteristics
Parameter Collector cut-off current (VBE = -1.5 V) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test conditions VCE = 100 V VCE = 100 V VCE = 50 V VEB = 5 V 100 IB = 40 mA IB = 200 mA IB = 200 mA VCE = 3 V VCE = 3 V VCE = 3 V VCE = 3 V f = 100 kHz 400 600 pF pF 750 100 300 2 3 4 2.8 18000 Min. Typ. Max. 0.5 5 1 2 Unit mA mA mA mA V V V V V
Tc = 150 C
Collector-emitter I = 100 mA sustaining voltage (IB = 0) C Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage DC current gain Small signal current gain IC = 10 A IC = 20 A __ IC = 20 A __ IC = 10 A __ IC = 10 A_ IC = 20 A_ IC = 10 A_ f = 1 kHz VCB = 10 V for 2N6284 for 2N6287
CCBO
Collector-base capacitance (IE = 0)
1. Pulsed duration = 300 s, duty cycle 1.5 % For PNP type voltage and current values are negative
3/8
Electrical characteristics
2N6284 - 2N6287
2.1
Figure 2.
Electrical characteristics (curves)
DC current gain (NPN type) Figure 3.
hFE
DC current gain (PNP type)
G-5350
TC =150C 10000
1000
TC =25C
TC =-55C
VCE =5V 100 0.1 1 10 IC (A)
Figure 4.
DC current gain (NPN type)
Figure 5.
DC current gain (PNP type)
Figure 6.
Collector-emitter saturation voltage Figure 7. (NPN type)
Collector-emitter saturation voltage (PNP type)
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2N6284 - 2N6287
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark.
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Revision history
2N6284 - 2N6287
4
Revision history
Table 5.
Date 02-Mar-2000 26-Jan-2009
Document revision history
Revision 2 3 Added paragraph 2.1 Changes
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2N6284 - 2N6287
Revision history
TO-3 mechanical data
mm. DIM. min. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 typ max. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30
0015923C
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2N6284 - 2N6287
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